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TetraFET
D1030UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C (2 pls)
B
G (typ)
2 1
H D
3
P (2 pls) A
5
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W - 28V - 175MHz PUSH-PULL
FEATURES
* SIMPLIFIED AMPLIFIER DESIGN
E (4 pls) F I
N
M
O
J
K
* SUITABLE FOR BROAD BAND APPLICATIONS
DRAIN 1 GATE 2
DR
PIN 1 PIN 3 PIN 5 SOURCE (COMMON) DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N O P Millimetres 19.05 10.77 45 9.78 5.71 27.94 1.52R 10.16 22.22 0.13 2.72 1.70 5.08 34.03 1.61R Tol. 0.50 0.13 5 0.13 0.13 0.13 0.13 0.13 MAX 0.02 0.13 0.13 0.50 0.13 0.08 PIN 2 PIN 4
* LOW Crss * SIMPLE BIAS CIRCUITS
Inches 0.75 0.424 45 0.385 0.225 1.100 0.060R 0.400 0.875 0.005 0.107 0.067 0.200 1.340 0.064R
Tol. 0.020 0.005 5 0.005 0.005 0.005 0.005 0.005 MAX 0.001 0.005 0.005 0.020 0.005 0.003
* LOW NOISE * HIGH GAIN - 13 dB MINIMUM
APPLICATIONS
* VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 500W 70V 20V 40A -65 to 150C 200C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5310 Issue 1
D1030UK
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min.
PER SIDE
BVDSS IDSS IGSS VGS(th) gfs Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Gate Threshold Voltage Matching Between Sides VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V ID = 10mA ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 8A VDS = VGS 1 6.4 70
Typ.
Max. Unit
V 8 1 7 mA A V mhos 0.1 V
VGS(th)match
TOTAL DEVICE
GPS VSWR Ciss Coss Crss Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance PO = 400W VDS = 28V f = 175MHz IDQ = 2A 13 50 20:1 VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 480 240 20 dB % -- pF pF pF
PER SIDE
VDS = 28V VDS = 28V
Reverse Transfer Capacitance VDS = 28V
* Pulse Test:
Pulse Duration = 300 s , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj-case Thermal Resistance Junction - Case Max. 0.35C / W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5310 Issue 1

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